SAMSUNG LAUNCH MASS PRODUCTION OF THE FIRST DRAM MEMORY IN THE WORLD

Samsung Electronics began mass production of the world’s first 4-gigabyte (GB) DRAM module, said by the company. The module is based on High Bandwidth Memory (HBM2) second-generation interface and is designed for high performance computing and networking systems, as well as high-end servers. The model offers high performance and more than seven times higher speed compared to current generation DRAM memory in order to work at a fast graphics rendering and parallel computing.

“With the mass production of next-generation memory HBM2 DRAM we can contribute to more rapid introduction of next-generation high-performance computer systems of global IT companies. With the use of our 3D technology of the memory we can deal with the diverse needs of global IT companies, while laying the foundation of a rapidly growing market of DRAM memory,” said EMAS Chung, senior vice president, Memory Marketing at Samsung Electronics .

The new DRAM memory is using the most efficient 20nm process of the company’s new generation HBM chip, also meets the needs of high performance, energy efficiency, reliability and compactness. The module is designed with a buffer chip and four 8-gigabyte cores combined in one package and connected with silicon substrate using TSV (Through Silicon Vias) and microbumps. So one 8GB HBM2 chip can hold more than 5,000 TSV holes on the PCB, or 36 times more than 8GB TSV DDR4 modules, which is a drastic improvement in data transmission compared to conventional modules.

The new 4GB HBM2 memory offers a range of frequencies, which is almost two times greater than that of HBM1 DRAM modules – 256GBps. The module offers improved energy efficiency compared to 4Gb-GDDR5 decisions as doubles the range of frequencies per watt, but also uses the hardware error correction (ECC) for greater reliability.

After the presentation of 128GB 3D TSV DDR4RDIMM (registered dual inline memory module) module in October 2015, the new HBM2 DRAM is the latest achievement in the development of TSV DRAM technology. Within one year Samsung plans to release also 8GB HBM2 DRAM module, allowing the designers to work with 95% more space compared to GDDR5 DRAM, which in turn represents a more effective solution for compact devices for graphics processing.

The company plans to gradually increase the production of modules HBM2 DRAM by the end of the year, to meet the growing needs of network systems and servers, intending to expand its product line of HBM2 DRAM solutions. So Samsung aims to maintain its leadership position in the market and increase its leading market share in the production of premium memory solutions.

This information is taken from:
http://www.engineering-review.bg/